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TEA152x
SMPS ICs for low-power systems
Rev. 04 -- 14 September 2010 Product data sheet
1. General description
The TEA152x family STARplug is a Switched Mode Power Supply (SMPS) controller IC that operates directly from the rectified universal mains. It is implemented in the high-voltage EZ-HV SOI process, combined with a low-voltage Bipolar Complementary Metal-Oxide Semiconductor (BiCMOS) process. The device includes a high-voltage power switch and a circuit for start-up directly from the rectified mains voltage. A dedicated circuit for valley switching is built in, which makes a very efficient slim-line electronic power-plug concept possible. In its most basic version of application, the TEA152x family acts as a voltage source. Here, no additional secondary electronics are required. A combined voltage and current source can be realized with minimum costs for external components. Implementation of the TEA152x family renders an efficient and low cost power supply system.
2. Features and benefits
Designed for general purpose supplies up to 30 W Integrated power switch: TEA1520x: 48 ; 650 V TEA1521x: 24 ; 650 V TEA1522x: 12 ; 650 V TEA1523P: 6.5 ; 650 V Operates from universal AC mains supplies (80 V to 276 V) Adjustable frequency for flexible design RC oscillator for load insensitive regulation loop constant Valley switching for minimum switch-on loss Frequency reduction at low power output makes low standby power possible (< 100 mW) Adjustable overcurrent protection Undervoltage protection Temperature protection Short-circuit winding protection Simple application with both primary and secondary (opto) feedback Available in DIP8 and SO14 packages
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
3. Applications
Chargers Adapters Set-Top Box (STB) DVD CD(R) TV/monitor standby supplies PC peripherals Microcontroller supplies in home applications and small portable equipment, etc.
4. Quick reference data
Table 1. Symbol Vdrain RDSon Quick reference data Parameter voltage on pin DRAIN drain-source on-state resistance TEA1520x Isource = -0.06 A Tj = 25 C Tj = 100 C TEA1521x Isource = -0.125 A Tj = 25 C Tj = 100 C TEA1522x Isource = -0.25 A Tj = 25 C Tj = 100 C TEA1523P Isource = -0.50 A Tj = 25 C Tj = 100 C VCC fosc Idrain supply voltage oscillator frequency current on pin DRAIN Vdrain > 60 V; no auxiliary supply continuous -0.4 10 6.5 9.0 100 1.5 7.5 10.0 +40 200 2 V kHz mA 12 17 13.8 19.6 24 34 27.6 39.1 48 68 55.2 78.2 Conditions Tj > 0 C Min -0.4 Typ Max +650 Unit V
TEA152X
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SMPS ICs for low-power systems
5. Ordering information
Table 2. Ordering information Package Name TEA1520P TEA1521P TEA1522P TEA1523P TEA1520T TEA1521T TEA1522T DIP8 DIP8 DIP8 DIP8 SO14 SO14 SO14 Description plastic dual in-line package; 8 leads (300 mil) plastic dual in-line package; 8 leads (300 mil) plastic dual in-line package; 8 leads (300 mil) plastic dual in-line package; 8 leads (300 mil) plastic small outline package; 14 leads; body width 3.9 mm plastic small outline package; 14 leads; body width 3.9 mm plastic small outline package; 14 leads; body width 3.9 mm Version SOT97-1 SOT97-1 SOT97-1 SOT97-1 SOT108-1 SOT108-1 SOT108-1 Type number
6. Block diagram
VCC
1 (1)
SUPPLY
8 (14)
DRAIN
VALLEY
TEA152x
7 (12, 13)
n.c.
GND
2 (2, 3, 4, 5, 9, 10)
LOGIC
100 mV
PWM stop 3 (6) 6 (11)
RC
OSCILLATOR
THERMAL SHUTDOWN PROTECTION LOGIC POWER-UP RESET
SOURCE
low freq
F 1.8 U
blank
overcurrent 4 (7) REG
2.5 V 0.5 V
10x short circuit winding
0.75 V
5 (8)
AUX
mgt419
Pin numbers without parenthesis refer to DIP8 packages and within parenthesis refer to SO14 packages.
Fig 1.
Block diagram
TEA152X
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7. Pinning information
7.1 Pinning
VCC GND GND VCC GND RC REG 1 2 8 7 DRAIN n.c. SOURCE AUX GND GND RC REG
1 2 3 4 5 6 7
001aae138
14 DRAIN 13 n.c. 12 n.c.
TEA152xT
11 SOURCE 10 GND 9 8 GND AUX
TEA152xP
3 4
001aae137
6 5
Fig 2.
Pin configuration DIP8
Fig 3.
Pin configuration SO14
7.2 Pin description
Table 3. Symbol VCC GND RC REG AUX SOURCE n.c. DRAIN Pin description Pin DIP8 1 2 3 4 5 6 7 8 SO14 1 2, 3, 4, 5, 9, 10 6 7 8 11 12, 13 14 supply voltage ground frequency setting regulation input input for voltage from the auxiliary winding for timing (demagnetization) source of the internal MOS switch not connected drain of the internal MOS switch; input for the start-up current and valley sensing Description
8. Functional description
The TEA152x family is the heart of a compact flyback converter, with the IC placed at the primary side. The auxiliary winding of the transformer can be used for indirect feedback to control the isolated output. This additional winding also powers the IC. A more accurate control of the output voltage and/or current can be implemented with an additional secondary sensing circuit and optocoupler feedback. The TEA152x family uses voltage mode control. The frequency is determined by the maximum transformer demagnetizing time and the time of the oscillator. In the first case, the converter operates in the Self-Oscillating Power Supply (SOPS) mode. In the latter case, it operates at a constant frequency, which can be adjusted with external
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components RRC and CRC. This mode is called Pulse Width Modulation (PWM). Furthermore, a primary stroke is started only in a valley of the secondary ringing. This valley switching principle minimizes capacitive switch-on losses.
8.1 Start-up and Underoltage lockout
Initially, the IC is self supplying from the rectified mains voltage. The IC starts switching as soon as the voltage on pin VCC passes the VCC(startup) level. The supply is taken over by the auxiliary winding of the transformer as soon as VCC is high enough and the supply from the line is stopped for high efficiency operation. When for some reason the auxiliary supply is not sufficient, the high-voltage supply also supplies the IC. As soon as the voltage on pin VCC drops below the VCC(stop) level, the IC stops switching and restarts from the rectified mains voltage.
8.2 Oscillator
The frequency of the oscillator is set by the external resistor and capacitor on pin RC. The external capacitor is charged rapidly to the VRC(max) level and, starting from a new primary stroke, it discharges to the VRC(min) level. Because the discharge is exponential, the relative sensitivity of the duty factor to the regulation voltage at low duty factor is almost equal to the sensitivity at high duty factors. This results in a more constant gain over the duty factor range compared to PWM systems with a linear sawtooth oscillator. Stable operation at low duty factors is easily realized. For high efficiency, the frequency is reduced as soon as the duty factor drops below a certain value. This is accomplished by increasing the oscillator charge time. To ensure that the capacitor can be charged within the charge time, the value of the oscillator capacitor should be limited to approximately 1 nF.
8.3 Duty factor control
The duty factor is controlled by the internal regulation voltage and the oscillator signal on pin RC. The internal regulation voltage is equal to the external regulation voltage (-2.5 V) multiplied by the gain of the error amplifier (typically 20 dB which is 10x).
8.4 Valley switching
A new cycle is started when the primary switch is switched on (see Figure 4). After a certain time (determined by the oscillator voltage RC and the internal regulation level), the switch is turned off and the secondary stroke starts. The internal regulation level is determined by the voltage on pin REG. After the secondary stroke, the drain voltage shows an oscillation with a frequency of approximately: 1 --------------------------------------------2 x x ( Lp x Cp ) where: Lp = primary self-inductance Cp = parasitic capacitance on drain node
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SMPS ICs for low-power systems
As soon as the oscillator voltage is high again and the secondary stroke has ended, the circuit waits for a low drain voltage before starting a new primary stroke. Figure 4 shows the drain voltage together with the valley signal, the signal indicating the secondary stroke and the RC voltage. The primary stroke starts some time before the actual valley at low ringing frequencies, and some time after the actual valley at high ringing frequencies.
primary stroke
secondary stroke
secondary ringing
drain
valley
secondary stroke A RC oscillator regulation level B
mgt423
A: Start of new cycle with valley switching B: Start of new cycle in a classical PWM system
Fig 4.
Signals for valley switching
Figure 5 shows a typical curve for a reflected output voltage N x Vo of 80 V. This voltage is the output voltage Vo (see Figure 6) transferred to the primary side of the transformer with the factor N (determined by the turns ratio of the transformer). Figure 5 shows that the system switches exactly at minimum drain voltage for ringing frequencies of 480 kHz, thus reducing the switch-on losses to a minimum. At 200 kHz, the next primary stroke is started at 33 before the valley. The switch-on losses are still reduced significantly.
TEA152X
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SMPS ICs for low-power systems
40 phase (deg) 20
mgt424
0
-20
-40
0
200
400
600 f (kHz)
800
Fig 5.
Typical phase of drain ringing at switch-on (at N x Vo = 80 V)
8.5 Demagnetization
The system operates in discontinuous conduction mode all the time. As long as the secondary stroke has not ended, the oscillator will not start a new primary stroke. During the first tsuppr seconds, demagnetization recognition is suppressed. This suppression may be necessary in applications where the transformer has a large leakage inductance and at low output voltages.
8.6 Minimum and maximum duty factor
The minimum duty factor of the switched mode power supply is 0 %. The maximum duty factor is set to 75 % (typical value at 100 kHz oscillation frequency).
8.7 OverCurrent Protection (OCP)
The cycle-by-cycle peak drain current limit circuit uses the external source resistor RI to measure the current. The circuit is activated after the leading edge blanking time tleb. The protection circuit limits the source voltage to Vsource(max), and thus limits the primary peak current.
8.8 Short-circuit winding protection
The short-circuit winding protection circuit is also activated after the leading edge blanking time. If the source voltage exceeds the short-circuit winding protection voltage Vswp, the IC stops switching. Only a power-on reset will restart normal operation. The short-circuit winding protection also protects in case of a secondary diode short circuit.
8.9 OverTemperature Protection (OTP)
An accurate temperature protection is provided in the device. When the junction temperature exceeds the thermal shutdown temperature, the IC stops switching. During thermal protection, the IC current is lowered to the start-up current. The IC continues normal operation as soon as the overtemperature situation has disappeared.
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8.10 OverVoltage Protection (OVP)
Overvoltage protection can be achieved in the application by pulling pin REG above its normal operation level. The current primary stroke is terminated immediately, and no new primary stroke is started until the voltage on pin REG drops to its normal operation level. Pin REG has an internal clamp. The current feed into this pin must be limited.
8.11 Output characteristics of complete power-plug
Typical characteristics:
* Output power: A wide range of output power levels can be handled by choosing the
RDS(on) and package of the TEA152x family. Power levels up to 30 W can be realized.
* Accuracy: The accuracy of the complete converter, functioning as a voltage source
with primary sensing, is approximately 8 % (mainly dependent on the transformer coupling). The accuracy with secondary sensing is defined by the accuracy of the external components. For safety requirements in case of optocoupler feedback loss, the primary sensing remains active when an overvoltage circuit is connected.
* Efficiency: An efficiency of 75 % at maximum output power can be achieved for a
complete converter designed for universal mains.
* Ripple: A minimum ripple is obtained in a system designed for a maximum duty factor
of 50 % under normal operating conditions, and a minimized dead time. The magnitude of the ripple in the output voltage is determined by the frequency and duty factor of the converter, the output current level and the value and ESR of the output capacitor.
8.12 Input characteristics of complete power-plug
Typical characteristics:
* The input voltage range comprises the universal AC mains (80 V to 276 V)
TEA152X
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SMPS ICs for low-power systems
9. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). All voltages are measured with respect to ground; positive currents flow into the device; pins VCC and RC are not allowed to be current driven and pins REG and AUX are not allowed to be voltage driven. Symbol Voltages VCC VRC Vsource Vdrain Currents IREG IAUX Isource current on pin REG current on pin AUX source current TEA1520x TEA1521x TEA1522x TEA1523P Idrain drain current TEA1520x TEA1521x TEA1522x TEA1523P General Ptot total power dissipation DIP8 package SO14 package Tstg Tj Vesd storage temperature junction temperature electrostatic discharge voltage human body model machine model
[1] [2]
[1] [2]
Parameter supply voltage voltage on pin RC voltage on pin SOURCE voltage on pin DRAIN
Conditions continuous DMOS power transistor Tj > 0 C
Min -0.4 -0.4 -0.4 -0.4 -10 -0.25 -0.5 -1 -2 -0.25 -0.5 -1 -2
Max +40 +3 +5 +650 6 +5 +0.25 +0.5 +1 +2 +0.25 +0.5 +1 +2
Unit V V V V mA mA A A A A A A A A
Tamb < 45 C Tamb < 50 C
-55 -40 -
1.0 1.0 +150 +145 2500 200
W W C C V V
Human body model: equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor. All pins are 2500 V maximum, except pin DRAIN, which is 1000 V maximum. Machine model: equivalent to discharging a 200 pF capacitor through a 0.75 H coil and a 10 series resistor.
TEA152X
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SMPS ICs for low-power systems
10. Thermal characteristics
Table 5. Symbol Rth(j-a) Thermal characteristics Parameter DIP8 package SO14 package
[1]
Conditions
[1]
Typ 100 91
Unit K/W K/W
thermal resistance from junction to ambient in free air
Thermal resistance Rth(j-a) can be lower when the GND pins are connected to sufficient copper area on the printed-circuit board. See the TEA152x application note for details.
11. Characteristics
Table 6. Characteristics Tamb = 25 C; no overtemperature; all voltages are measured with respect to ground; currents are positive when flowing into the IC; unless otherwise specified. Symbol Supply ICC(oper) ICC(startup) ICC(ch) VCC(startup) VCC(stop) Idrain operating supply current start-up supply current charge supply current start-up supply voltage stop supply voltage current on pin DRAIN undervoltage lockout Vdrain > 60 V no auxiliary supply with auxiliary supply Pulse-width modulator min max SOPS Vdet(demag) tsup(xfmr_ring) RC oscillator VRC(min) VRC(max) tch(RC) fosc VREG Gv Vclamp(REG) minimum voltage on pin RC maximum voltage on pin RC charge time on pin RC oscillator frequency voltage on pin REG voltage gain clamp voltage on pin REG error amplifier IREG = 6 mA 60 2.4 10 2.4 75 2.5 1 100 2.5 20 90 2.6 200 2.6 7.5 mV V s kHz V dB V demagnetization detection voltage transformer ringing suppression time start of 2nd stroke 50 1.0 100 1.5 150 2.0 mV s minimum duty factor maximum duty cycle f = 100 kHz 0 75 % % 1.5 30 2 125 mA A normal operation start-up Vdrain > 60 V -6 9 7.0 1.3 180 -4 9.5 7.5 1.9 400 -3 10 8.0 mA A mA V V Parameter Conditions Min Typ Max Unit
Duty factor regulator: pin REG
TEA152X
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Table 6. Characteristics ...continued Tamb = 25 C; no overtemperature; all voltages are measured with respect to ground; currents are positive when flowing into the IC; unless otherwise specified. Symbol (V/t)vrec fvalley td(vrec-swon) Parameter valley recognition voltage change with time ringing frequency for valley switching valley recognition to switch-on delay time maximum voltage on pin SOURCE delay from detecting Vsource(max) to switch-off short-winding protection voltage leading edge blanking time leakage current on pin DRAIN breakdown voltage on pin DRAIN drain-source on-state resistance TEA1520x Isource = -0.06 A Tj = 25 C Tj = 100 C TEA1521x Isource = -0.125 A Tj = 25 C Tj = 100 C TEA1522x Isource = -0.25 A Tj = 25 C Tj = 100 C TEA1523P Isource = -0.50 A Tj = 25 C Tj = 100 C tf(DRAIN) fall time on pin DRAIN Vi = 300 V; no external capacitor at drain 6.5 9.0 75 7.5 10.0 ns 12 17 13.8 19.6 24 34 27.6 39.1 48 68 55.2 78.2 Vdrain = 650 V Tj > 0 C V/t = 0.1 V/s V/t = 0.5 V/s V/t = 0.5 V/s N x Vo = 100 V Conditions Min Typ Max Unit Valley switching -102 200 550 150 +102 V/s 800 kHz ns
Current and short-circuit winding protection Vsource(max) td(prop) Vswp tleb IL(drain) VBR(DRAIN) RDSon 0.47 0.7 250 650 0.50 160 0.75 350 0.53 185 0.8 450 125 V ns V ns A V
FET output stage
Temperature protection Tprot(max) Tprot(hys) maximum threshold temperature hysteresis of protection temperature 150 160 2 170 C C
TEA152X
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12. Application information
LF D5 Z1 CF1 CF2 D1 C5
Vo
mains
R1 R2 D2
CVCC
VCC GND
1 2 TEA152xP 3 4
8 7 6 5
DRAIN n.c. SOURCE AUX
RI RAUX
C6 - Ycap
RRC
RC
R4 CRC R3
REG
mgt425
Fig 6.
Primary sensed application; configuration for TEA152xP (DIP8)
Further application information can be found in the TEA152x application note.
TEA152X
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13. Package outline
DIP8: plastic dual in-line package; 8 leads (300 mil) SOT97-1
D seating plane
ME
A2
A
L
A1
c Z e b1 wM (e 1) b2 5 MH
b 8
pin 1 index E
1
4
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.2 0.17 A1 min. 0.51 0.02 A2 max. 3.2 0.13 b 1.73 1.14 0.068 0.045 b1 0.53 0.38 0.021 0.015 b2 1.07 0.89 0.042 0.035 c 0.36 0.23 0.014 0.009 D (1) 9.8 9.2 0.39 0.36 E (1) 6.48 6.20 0.26 0.24 e 2.54 0.1 e1 7.62 0.3 L 3.60 3.05 0.14 0.12 ME 8.25 7.80 0.32 0.31 MH 10.0 8.3 0.39 0.33 w 0.254 0.01 Z (1) max. 1.15 0.045
Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. OUTLINE VERSION SOT97-1 REFERENCES IEC 050G01 JEDEC MO-001 JEITA SC-504-8 EUROPEAN PROJECTION
ISSUE DATE 99-12-27 03-02-13
Fig 7.
TEA152X
Package outline SOT97-1 (DIP8)
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SMPS ICs for low-power systems
SO14: plastic small outline package; 14 leads; body width 3.9 mm
SOT108-1
D
E
A X
c
y
HE
vMA
Z
14 8
Q A2 A1
pin 1 index
(A 3) Lp L
A
1
7
e
bp
wM
detail X
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25
0.01
bp 0.49 0.36
c 0.25 0.19
D (1) 8.75 8.55
E (1) 4.0 3.8
0.16 0.15
e 1.27
0.05
HE 6.2 5.8
L
1.05
Lp 1.0 0.4
Q 0.7 0.6
0.028 0.024
v
0.25 0.01
w 0.25
0.01
y 0.1
Z (1) 0.7 0.3
o
0.010 0.057 inches 0.069 0.004 0.049
0.019 0.0100 0.35 0.014 0.0075 0.34
0.244 0.039 0.041 0.228 0.016
0.028 0.004 0.012
8 o 0
Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. OUTLINE VERSION SOT108-1 REFERENCES IEC
076E06
JEDEC
MS-012
JEITA
EUROPEAN PROJECTION
ISSUE DATE
99-12-27 03-02-19
Fig 8.
TEA152X
Package outline SOT108-1 (SO14)
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14. Abbreviations
Table 7. Acronym BiCMOS DMOS ESR EZ-HV SOI FET PWM SMPS SOPS Abbreviations Description Bipolar Complementary Metal-Oxide Semiconductor Diffusion Metal-Oxide Semiconductor Equivalent Series Resistance Easy High Voltage Silicon-On-Insulator Field-Effect Transistor Pulse Width Modulation Switched Mode Power Supply Self-Oscillating Power Supply
15. Revision history
Table 8. Revision history Release date 20100914 Data sheet status Product data sheet Change notice Supersedes TEA152X_3 Document ID TEA152X v4.0 Modifications: TEA152X_3 Modifications:
* * * * * *
Table 1 "Quick reference data" updated Table 4 "Limiting values" updated Product data sheet TEA152X_FAM_2 The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. The minimum value of Tamb has changed in Table 1 and Table 4 The minimum value of Tj has changed in Table 4 Product data sheet Product specification TEA152X_FAMILY_1 -
20090323
TEA152X_FAM_2 TEA152X_FAMILY_1
20060125 20000908
TEA152X
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16. Legal information
16.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
(c) NXP B.V. 2010. All rights reserved.
16.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or
TEA152X
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 04 -- 14 September 2010
16 of 20
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. STARplug -- is a trademark of NXP B.V. EZ-HV -- is a trademark of NXP B.V.
17. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
TEA152X
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 14 September 2010
17 of 20
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
18. Tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Quick reference data . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . .3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . .4 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . .9 Thermal characteristics . . . . . . . . . . . . . . . . . .10 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision history . . . . . . . . . . . . . . . . . . . . . . . .15
continued >>
TEA152X
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 14 September 2010
18 of 20
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
19. Figures
Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6. Fig 7. Fig 8. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Pin configuration DIP8 . . . . . . . . . . . . . . . . . . . . . .4 Pin configuration SO14 . . . . . . . . . . . . . . . . . . . . .4 Signals for valley switching . . . . . . . . . . . . . . . . . .6 Typical phase of drain ringing at switch-on (at N x Vo = 80 V). . . . . . . . . . . . . . . . . . . . . . . . . .7 Primary sensed application; configuration for TEA152xP (DIP8) . . . . . . . . . . . . . . . . . . . . . .12 Package outline SOT97-1 (DIP8) . . . . . . . . . . . .13 Package outline SOT108-1 (SO14) . . . . . . . . . . .14
continued >>
TEA152X
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 -- 14 September 2010
19 of 20
NXP Semiconductors
TEA152x
SMPS ICs for low-power systems
20. Contents
1 2 3 4 5 6 7 7.1 7.2 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 8.10 8.11 8.12 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 19 20 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 4 Start-up and Underoltage lockout . . . . . . . . . . . 5 Oscillator. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Duty factor control . . . . . . . . . . . . . . . . . . . . . . 5 Valley switching . . . . . . . . . . . . . . . . . . . . . . . . 5 Demagnetization. . . . . . . . . . . . . . . . . . . . . . . . 7 Minimum and maximum duty factor . . . . . . . . . 7 OverCurrent Protection (OCP) . . . . . . . . . . . . . 7 Short-circuit winding protection. . . . . . . . . . . . . 7 OverTemperature Protection (OTP) . . . . . . . . . 7 OverVoltage Protection (OVP) . . . . . . . . . . . . . 8 Output characteristics of complete power-plug. 8 Input characteristics of complete power-plug . . 8 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal characteristics . . . . . . . . . . . . . . . . . 10 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 10 Application information. . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 September 2010 Document identifier: TEA152X

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